Band structure analysis in SiGe nanowires
نویسندگان
چکیده
منابع مشابه
Electronic structure and transmission characteristics of SiGe nanowires
Atomistic disorder such as alloy disorder, surface roughness and inhomogeneous strain are known to influence electronic structure and charge transport. Scaling of device dimensions to the nanometer regime enhances the effects of disorder on device characteristics and the need for atomistic modeling arises. In this work SiGe alloy nanowires are studied from two different points of view: (1) Elec...
متن کاملModeling and Analysis of Core-Shell Si/SiGe Nanowires
In this thesis, I present a theoretical model for the Si core/SiGe shell core-shell nanowire system. A model for the single carrier pocket core-shell nanowire is first developed, along with the boundary conditions of a circular wire and sharp interfaces between the two media. A numerical scheme is then developed for the core-shell nanowire system, along with educated approximations for the nume...
متن کاملNanoscale Surface and Sub-Surface Chemical Analysis of SiGe Nanowires
Si/Si1-xGex axial heterostructured nanowires (hNW) are under investigation for downscaling of metaloxide-semiconductor field-effect transistors (MOSFETs). New architectures based on vertically aligned nanowires tunnel-FETs are promising candidates for reduced power dissipation and low voltage operation [1]. The axial growth of lattice mismatched heterostructures would allow band-gap engineering...
متن کاملIndividualization and Electrical Characterization of SiGe Nanowires
SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than thre...
متن کاملElectronic Band Structure Modeling in Strained Si-Nanowires: Two Band k ·p Versus Tight Binding
The subband structure of silicon nanowires has gained much interest recently. Nanowires with diameters below 10 nm are predicted to have a significantly altered subband structure compared with bulk silicon. The effective mass approximation fails to describe these alterings correctly, and so far the semiempirical tight binding method and first principles calculations were used to investigate the...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials Science and Engineering: B
سال: 2012
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2011.10.008